收藏本站
W971GG6JB
1. GENERAL DESCRIPTION
The W971GG6JB is a 1G bits DDR2 SDRAM, organized as 8,388,608 words ? 8 banks ? 16 bits. This
device achieves high speed transfer rates up to 1066Mb/sec/pin (DDR2-1066) for various applications.
W971GG6JB is sorted into the following grade parts: -18, -25, 25L, 25I, 25A, 25K, -3 and -3A. The -18
grade parts is compliant to the DDR2-1066 (6-6-6) specification. The -25/25L/25I/25A/25K grade parts
are compliant to the DDR2-800 (5-5-5) specification (the 25L grade parts is guaranteed to support
I DD2P = 7 mA and I DD6 = 4 mA at commercial temperature, the 25I industrial grade parts is guaranteed
to support -40°C ≤ T CASE ≤ 95°C). The -3/-3A grade parts is compliant to the DDR2-667 (5-5-5)
specification.
The automotive grade parts temperature, if offered, has two simultaneous requirements: ambient
temperature (T A ) surrounding the device cannot be less than -40°C or greater than +95°C (for 25A
and -3A), +105°C (for 25K), and the case temperature (T CASE ) cannot be less than -40°C or greater
than +95°C (for 25A and -3A), +105°C (for 25K). JEDEC specifications require the refresh rate to
double when T CASE exceeds +85°C; this also requires use of the high-temperature self refresh option.
Additionally, ODT resistance and the input/output impedance must be derated when T CASE is < 0°C or
> +85°C.
All of the control and address inputs are synchronized with a pair of externally supplied differential
clocks. Inputs are latched at the cross point of differential clocks (CLK rising and CLK falling). All
I/Os are synchronized with a single ended DQS or differential DQS- DQS pair in a source
synchronous fashion.
2. FEATURES
?
?
?
?
?
?
?
?
?
?
?
?
?
?
?
?
?
?
?
?
Power Supply: V DD , V DDQ = 1.8 V ± 0.1 V
Double Data Rate architecture: two data transfers per clock cycle
CAS Latency: 3, 4, 5, 6 and 7
Burst Length: 4 and 8
Bi-directional, differential data strobes (DQS and DQS ) are transmitted / received with data
Edge-aligned with Read data and center-aligned with Write data
DLL aligns DQ and DQS transitions with clock
Differential clock inputs (CLK and CLK )
Data masks (DM) for write data
Commands entered on each positive CLK edge, data and data mask are referenced to both edges
of DQS
Posted CAS programmable additive latency supported to make command and data bus efficiency
Read Latency = Additive Latency plus CAS Latency (RL = AL + CL)
Off-Chip-Driver impedance adjustment (OCD) and On-Die-Termination (ODT) for better signal
quality
Auto-precharge operation for read and write bursts
Auto Refresh and Self Refresh modes
Precharged Power Down and Active Power Down
Write Data Mask
Write Latency = Read Latency - 1 (WL = RL - 1)
Interface: SSTL_18
Packaged in WBGA 84 Ball (8X12.5 mm 2 ), using Lead free materials with RoHS compliant
Publication Release Date: Sep. 24, 2013
-4-
Revision A09
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
W971GG8JB-25 IC DDR2 SDRAM 1GBIT 60WBGA
W9725G6IB-25 IC DDR2-800 SDRAM 256MB 84-WBGA
W9725G6JB25I IC DDR2 SDRAM 256MBIT 84WBGA
W9725G6KB-25I IC DDR2 SDRAM 256MBIT 84WBGA
W972GG6JB-3I IC DDR2 SDRAM 2GBITS 84WBGA
W9751G6IB-25 IC DDR2-800 SDRAM 512MB 84-WBGA
W9751G6KB-25 IC DDR2 SDRAM 512MBIT 84WBGA
W9812G6JH-6I IC SDRAM 128MBIT 54TSOPII
相关代理商/技术参数
W971GG6JB-25I 制造商:Winbond Electronics 功能描述:-40~85 1GB DDR2 FOR INDUSTRY
W971GG6JB25ITR 制造商:Winbond Electronics Corp 功能描述:1G, DDR2-800, X16, IND TEMP
W971GG6JB25TR 制造商:Winbond Electronics Corp 功能描述:NR, DDR2-800, X16
W971GG6JB-3 制造商:Winbond Electronics Corp 功能描述:1GBIT DDRII
W971GG6KB-18 制造商:Winbond Electronics Corp 功能描述:1G, DDR2-1066, X16 制造商:Winbond Electronics Corp 功能描述:IC MEMORY
W971GG8JB 制造商:WINBOND 制造商全称:Winbond 功能描述:16M × 8 BANKS × 8 BIT DDR2 SDRAM
W971GG8JB-25 功能描述:IC DDR2 SDRAM 1GBIT 60WBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:4.5M（256K x 18） 速度:133MHz 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x20） 包装:托盘
W9725G6IB-25 功能描述:IC DDR2-800 SDRAM 256MB 84-WBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (512 x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:2.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.173"，4.40mm 宽） 供应商设备封装:8-MFP 包装:带卷 (TR)